The coefficient of friction (COF) was measured during the process and was found to decrease with both down pressure and platen rotation. the accessories of the CMP tester were first optimized for the reproducibility of the results. A CMP tester was used to study the fundamental aspects of the CMP process. In this paper, we present the tribological properties of silicon dioxide during the CMP process. Understanding the tribological properties of a dielectric layer in the CMP process is critical for successful evaluation and implementation of the materials. Chemical mechanical planarization (CMP) has been proved to achieve excellent global and local planarity, and, as feature sizes shrink, the use of CMP will be critical for planarizing multilevel structures.
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